2N5793AU/TR
DUAL SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
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Microchip Technology's 2N5793AU-TR is a dual NPN bipolar junction transistor array designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 40V and a maximum collector current of 600mA. Featuring a minimum DC current gain (hFE) of 40 at 150mA and 10V, it provides robust amplification characteristics. The saturation voltage (Vce Sat) is specified at a maximum of 900mV at 30mA base current and 300mA collector current. The device dissipates a maximum power of 600mW and operates across a wide temperature range from -65°C to 200°C (TJ). The 2N5793AU-TR is supplied in a 6-SMD, No Lead package, presented in tape and reel. This component finds application in various electronic systems requiring matched dual transistor performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power - Max | 600mW |
| Current - Collector (Ic) (Max) | 600mA |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Vce Saturation (Max) @ Ib, Ic | 900mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | U |