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2N5793

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2N5793

NPN TRANSISTOR

Manufacturer: Microchip Technology

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 600mA 500mW Through Hole TO-78-6

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-78-6 Metal Can
Mounting TypeThrough Hole
Transistor Type2 NPN (Dual)
Operating Temperature-65°C ~ 200°C
Power - Max500mW
Current - Collector (Ic) (Max)600mA
Voltage - Collector Emitter Breakdown (Max)40V
Vce Saturation (Max) @ Ib, Ic900mV @ 30mA, 300mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-78-6

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