MIWP75N120-BP
InterfaceManufacturer: Micro Commercial Co
Categories: Single IGBTs
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Micro Commercial Co MIWP75N120-BP is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current (Ic) rating of 150 A, with a pulsed capability (Icm) of 300 A. The device dissipates a maximum power of 789 W and is packaged in a TO-247-3 through-hole configuration. Key electrical parameters include a gate charge of 622 nC and a Vce(on) of 2.3V at 15V and 75A. Switching characteristics are detailed with on/off times at 25°C of 112 ns/478 ns and switching energies of 11.3 mJ (on) and 4.7 mJ (off), tested under conditions of 600V, 75A, 10 Ohm, and 15V. The operating temperature range is -55°C to 175°C (TJ). This IGBT is suitable for use in power switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 10 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 293 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 75A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 112ns/478ns |
| Switching Energy | 11.3mJ (on), 4.7mJ (off) |
| Test Condition | 600V, 75A, 10Ohm, 15V |
| Gate Charge | 622 nC |
| Current - Collector (Ic) (Max) | 150 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 789 W |
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