MIW50N65H-BP
IGBTManufacturer: Micro Commercial Co
Categories: Single IGBTs
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Micro Commercial Co MIW50N65H-BP is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-power applications. This component features a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 80 A, with a pulsed capability of 200 A. The IGBT exhibits a low on-state voltage (Vce(on)) of 1.9 V at 15 V gate-emitter voltage and 50 A collector current. Its robust design includes a maximum power dissipation of 250 W and an operating temperature range of -55°C to 175°C. Switching characteristics include a typical turn-on delay of 69 ns and turn-off delay of 404 ns at 25°C, with a reverse recovery time of 88 ns. Switching energy is specified at 1.59 mJ (on) and 1.34 mJ (off) under test conditions of 400 V, 50 A, 10 Ohm, and 15 V. The MIW50N65H-BP is packaged in a Through Hole TO-247-3 configuration and is supplied in bulk packaging. This device is suitable for power factor correction, motor drives, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 88 ns |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 50A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 69ns/404ns |
| Switching Energy | 1.59mJ (on), 1.34mJ (off) |
| Test Condition | 400V, 50A, 10Ohm, 15V |
| Gate Charge | 186 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 250 W |
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