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MIW40N65AT0Y-BP

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MIW40N65AT0Y-BP

IGBT TRENCH FS 650V 80A TO247AB

Manufacturer: Micro Commercial Co

Categories: Single IGBTs

Quality Control: Learn More

The Micro Commercial Co MIW40N65AT0Y-BP is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a maximum collector-emitter voltage of 650 V and a continuous collector current (Ic) of 80 A, with a pulsed capability (Icm) reaching 160 A. The device dissipates a maximum power of 187 W and operates within an extended temperature range of -40°C to 175°C (TJ). Key electrical parameters include a gate charge of 200 nC and a Vce(on) of 1.95V at 15V, 40A. Switching characteristics are defined by a reverse recovery time (trr) of 68 ns and switching energies of 1.27mJ (on) and 460µJ (off) under test conditions of 300V, 40A, 20 Ohm, 15V. The MIW40N65AT0Y-BP is housed in a TO-247AB package and supplied in Tape & Reel (TR) packaging. This IGBT is suitable for use in power supply, industrial motor drives, and lighting applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input Type-
Reverse Recovery Time (trr)68 ns
Vce(on) (Max) @ Vge, Ic1.95V @ 15V, 40A
Supplier Device PackageTO-247AB
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C19ns/129ns
Switching Energy1.27mJ (on), 460µJ (off)
Test Condition300V, 40A, 20Ohm, 15V
Gate Charge200 nC
Grade-
Current - Collector (Ic) (Max)80 A
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector Pulsed (Icm)160 A
Power - Max187 W
Qualification-

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