MIW40N65-BP
IGBT 650V 40A TO-247Manufacturer: Micro Commercial Co
Categories: Single IGBTs
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Micro Commercial Co's MIW40N65-BP is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a collector-emitter breakdown voltage of 650V and a continuous collector current of 80A, with a pulsed capability of 120A. The device dissipates a maximum power of 280W. Key electrical characteristics include a gate charge of 165 nC and a Vce(on) of 2.4V at 15V Vge and 40A Ic. Switching performance is quantified by switching energies of 3.3mJ (on) and 1.4mJ (off), with typical turn-on and turn-off delays of 62ns and 265ns respectively at 25°C. The MIW40N65-BP is housed in a TO-247-3 package for through-hole mounting and operates within an extended temperature range of -55°C to 150°C. This IGBT is suitable for use in power factor correction, motor control, and industrial power supply systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 41 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 62ns/265ns |
| Switching Energy | 3.3mJ (on), 1.4mJ (off) |
| Test Condition | 600V, 40A, 10Ohm, 15V |
| Gate Charge | 165 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 280 W |
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