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MIW40N120FLA-BP

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MIW40N120FLA-BP

IGBT 1200V 40A,TO-247AB

Manufacturer: Micro Commercial Co

Categories: Single IGBTs

Quality Control: Learn More

Micro Commercial Co MIW40N120FLA-BP is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) with a 1200 V collector-emitter breakdown voltage. This component is rated for a continuous collector current of 80 A and a pulsed collector current of 160 A. It features a maximum power dissipation of 428 W and a Vce(on) of 2.3V at 15V Vge and 40A Ic. The switching characteristics include a gate charge of 330 nC and typical switching energies of 3.8mJ (on) and 1.7mJ (off) under test conditions of 600V, 40A, 12 Ohm, and 15V. The MIW40N120FLA-BP is packaged in a TO-247AB (TO-247-3) through-hole mount and operates within an ambient temperature range of -40°C to 175°C (TJ). This device is suitable for applications in power conversion, motor control, and industrial power supplies.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 40A
Supplier Device PackageTO-247AB
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C45ns/180ns
Switching Energy3.8mJ (on), 1.7mJ (off)
Test Condition600V, 40A, 12Ohm, 15V
Gate Charge330 nC
Current - Collector (Ic) (Max)80 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)160 A
Power - Max428 W

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