MIW40N120F-BP
InterfaceManufacturer: Micro Commercial Co
Categories: Single IGBTs
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The Micro Commercial Co MIW40N120F-BP is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component offers a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 80 A, with a pulsed capability of 160 A. With a maximum power dissipation of 277 W and a low on-state voltage of 2.2 V at 15 V gate-emitter and 40 A collector current, the MIW40N120F-BP exhibits efficient switching characteristics, with typical turn-on delay of 160 ns and turn-off delay of 237 ns at 25°C. The IGBT features a gate charge of 240 nC and a reverse recovery time of 367 ns. This through-hole component, supplied in a TO-247-3 package, is suitable for demanding applications in power conversion, motor control, and industrial power systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 367 ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 160ns/237ns |
| Switching Energy | 5.02mJ (on), 2.72mJ (off) |
| Test Condition | 600V, 40A, 10Ohm, 15V |
| Gate Charge | 240 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 277 W |
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