MIW40N120-BP
IGBT 1200V 40A TO-247Manufacturer: Micro Commercial Co
Categories: Single IGBTs
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Micro Commercial Co IGBT, part number MIW40N120-BP, is a Trench Field Stop insulated gate bipolar transistor designed for high-voltage applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 80 A, with a pulsed capability of 160 A. The device exhibits a maximum on-state voltage of 2.4 V at 15 V gate-emitter voltage and 40 A collector current. With a maximum power dissipation of 277 W and a gate charge of 239 nC, it offers efficient switching with specified energies of 3.3 mJ (on) and 1.4 mJ (off) under test conditions of 600 V, 40 A, 10 Ohm, and 15 V. The MIW40N120-BP is housed in a TO-247-3 package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 150°C (TJ). This component finds application in power conversion systems and high-power switching circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 80 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 62ns/265ns |
| Switching Energy | 3.3mJ (on), 1.4mJ (off) |
| Test Condition | 600V, 40A, 10Ohm, 15V |
| Gate Charge | 239 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 277 W |
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