MIW30N65FLA-BP
IGBT 650V 30A,TO-247ABManufacturer: Micro Commercial Co
Categories: Single IGBTs
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The Micro Commercial Co MIW30N65FLA-BP is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This device features a 650V collector-emitter breakdown voltage and a continuous collector current capability of 60A, with a pulsed capability of 120A. It offers a maximum power dissipation of 187W and a low on-state voltage of 2.1V at 15V gate-source voltage and 30A collector current. Typical switching characteristics include a gate charge of 150 nC and switching energies of 920µJ (on) and 450µJ (off) under test conditions of 300V, 30A, 33 Ohms, and 15V. The MIW30N65FLA-BP utilizes a standard input type and is housed in a TO-247AB (TO-247-3) package, suitable for through-hole mounting. It operates across a temperature range of -40°C to 175°C (TJ). This component is commonly employed in power factor correction, uninterruptible power supplies, and motor drive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 30A |
| Supplier Device Package | TO-247AB |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 40ns/120ns |
| Switching Energy | 920µJ (on), 450µJ (off) |
| Test Condition | 300V, 30A, 33Ohm, 15V |
| Gate Charge | 150 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 187 W |
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