MIW30N65FA-BP
IGBT 650V 30A,TO-247ABManufacturer: Micro Commercial Co
Categories: Single IGBTs
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Micro Commercial Co MIW30N65FA-BP is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage switching applications. This component features a 650V collector-emitter breakdown voltage and a continuous collector current rating of 60A, with a pulsed capability of 120A. The IGBT type utilizes Trench Field Stop technology for enhanced performance and efficiency. Key electrical characteristics include a typical gate charge of 150 nC and a maximum on-state voltage (Vce(on)) of 2.4V at 15V gate drive and 30A collector current. Switching characteristics, tested under a 300V, 30A, 33 Ohm load, show turn-on delay (Td(on)) of 37ns and turn-off delay (Td(off)) of 113ns, with corresponding switching energies of 870µJ (on) and 260µJ (off). The device has a maximum power dissipation of 187W and operates within a temperature range of -40°C to 175°C. Supplied in a TO-247AB through-hole package, this IGBT is suitable for power factor correction, motor control, and power supply applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 30A |
| Supplier Device Package | TO-247AB |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 37ns/113ns |
| Switching Energy | 870µJ (on), 260µJ (off) |
| Test Condition | 300V, 30A, 33Ohm, 15V |
| Gate Charge | 150 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 187 W |
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