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MIW25N120FA-BP

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MIW25N120FA-BP

IGBT 1200V 25A,TO-247AB

Manufacturer: Micro Commercial Co

Categories: Single IGBTs

Quality Control: Learn More

Micro Commercial Co MIW25N120FA-BP is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications. This component features a breakdown voltage of 1200V and a continuous collector current rating of 50A, with a pulsed capability of 100A. The device dissipates a maximum power of 326W and operates within a temperature range of -40°C to 175°C. Key switching characteristics include a gate charge of 200 nC and switching energies of 1.8mJ (on) and 1.4mJ (off) under test conditions of 600V, 25A, 18 Ohm, and 15V, with typical on/off delay times of 158ns/331ns. The on-state voltage (Vce(on)) is a maximum of 2.35V at 15V gate-emitter voltage and 25A collector current. Supplied in a TO-247AB package, this IGBT is suitable for industrial power supplies, motor control, and renewable energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.35V @ 15V, 25A
Supplier Device PackageTO-247AB
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C158ns/331ns
Switching Energy1.8mJ (on), 1.4mJ (off)
Test Condition600V, 25A, 18Ohm, 15V
Gate Charge200 nC
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)100 A
Power - Max326 W

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