MIW15N120FA-BP
IGBT 1200V 15A,TO-247ABManufacturer: Micro Commercial Co
Categories: Single IGBTs
Quality Control: Learn More
Micro Commercial Co MIW15N120FA-BP is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) with a collector-emitter breakdown voltage of 1200 V. This device features a continuous collector current rating of 30 A and a pulsed collector current of 60 A, with a maximum power dissipation of 200 W. The gate charge is specified at 140 nC. The MIW15N120FA-BP is supplied in a TO-247AB package for through-hole mounting. Typical switching characteristics at 600V, 15A, 33 Ohm, 15V indicate turn-on and turn-off delays of 45 ns and 128 ns respectively, with corresponding switching energies of 2.2 mJ (on) and 1.3 mJ (off). The on-state voltage (Vce(on)) is a maximum of 2.35 V at 15V gate-emitter voltage and 15A collector current. Operating temperature range is from -40°C to 175°C (TJ). This component is commonly utilized in power factor correction, induction heating, and electric vehicle charging applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 15A |
| Supplier Device Package | TO-247AB |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 45ns/128ns |
| Switching Energy | 2.2mJ (on), 1.3mJ (off) |
| Test Condition | 600V, 15A, 33Ohm, 15V |
| Gate Charge | 140 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 200 W |
Request a Quote
Clients Also Buy
MIW40N65-BP
IGBT 650V 40A TO-247
MIW40N65RA-BP
IGBT 650V 40A,TO-247AB
MIWP75N120-BP
Interface