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SIL03N10-TP

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SIL03N10-TP

MOSFET N-CH 100V 3A SOT23-6L

Manufacturer: Micro Commercial Co

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Micro Commercial Co SIL03N10-TP is an N-Channel MOSFET designed for surface mount applications. This component features a Drain to Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 3A (Ta) at 25°C. It offers a maximum on-resistance (Rds On) of 120mOhm at 3A and 10V. The device has a gate charge (Qg) of 19.2 nC at 10V and an input capacitance (Ciss) of 810 pF at 50V. With a maximum power dissipation of 1.5W, it operates across a temperature range of -55°C to 150°C (TJ). The SIL03N10-TP is supplied in a SOT-23-6L package and is available on tape and reel. This MOSFET is suitable for use in various power management and switching applications within the industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Rds On (Max) @ Id, Vgs120mOhm @ 3A, 10V
FET Feature-
Power Dissipation (Max)1.5W
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageSOT-23-6L
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds810 pF @ 50 V

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