SICW040N120Y4-BP
MOSFET N-CH 1200V 63A TO247-4Manufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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Micro Commercial Co SICW040N120Y4-BP is an N-Channel Silicon Carbide MOSFET designed for high-voltage applications. This component offers a drain-source voltage (Vdss) of 1200 V and continuous drain current (Id) capability of 63 A at 25°C (Tc). With a maximum power dissipation of 390 W and a low on-resistance (Rds On) of 52 mOhm at 40 A and 20 V, it provides efficient power switching. The device features a gate charge (Qg) of 120 nC at 20 V and input capacitance (Ciss) of 2225 pF at 1000 V. Packaged in a TO-247-4 through-hole configuration, it operates across a temperature range of -55°C to 175°C (TJ). This Silicon Carbide MOSFET is suitable for use in renewable energy systems, electric vehicle charging, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 63A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 40A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 390W |
| Vgs(th) (Max) @ Id | 3.5V @ 10mA |
| Supplier Device Package | TO-247-4 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2225 pF @ 1000 V |
| Qualification | - |
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