SI3139KL3-TP
MOSFET P-CH 20V 660MA DFN1006-3Manufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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Micro Commercial Co SI3139KL3-TP is a P-Channel MOSFET designed for high-density applications. This device features a 20V Drain-Source Voltage (Vdss) and a continuous drain current of 660mA at 25°C ambient. The Rds(On) is specified at a maximum of 500mOhm at 150mA and 4.5V Vgs. With a gate threshold voltage (Vgs(th)) of 1.1V at 250µA, it offers efficient switching characteristics. The input capacitance (Ciss) is a maximum of 113pF at 16V. This surface mount component is housed in a compact DFN1006-3 (SC-101, SOT-883) package, suitable for high-density board layouts. The maximum power dissipation is 100mW. Operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in consumer electronics and portable device power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 660mA (Ta) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 150mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 100mW |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | DFN1006-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 113 pF @ 16 V |
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