SI3134KW-TP
MOSFET N-CH ENH FET 20VDS 12VGSManufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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The Micro Commercial Co SI3134KW-TP is an N-Channel enhancement mode MOSFET designed for efficient switching applications. This device features a maximum drain-to-source voltage (Vdss) of 20V and can handle a continuous drain current (Id) of up to 750mA at 25°C. With a low on-resistance (Rds On) of 380mOhm at 650mA and 4.5V, it minimizes conduction losses. The input capacitance (Ciss) is specified at 120pF at 16V. Operating with a gate-source voltage (Vgs) range of ±12V, it has a threshold voltage (Vgs(th)) of 1V at 250µA. The SI3134KW-TP is housed in a compact SOT-323 surface mount package, offering a power dissipation of 200mW (Ta). This component is suitable for use in portable electronics, consumer devices, and power management circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 750mA |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 650mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-323 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 16 V |
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