SI3134KLA-TP
MOSFET N-CHANNEL MOSFETManufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Micro Commercial Co SI3134KLA-TP is an N-Channel Power MOSFET designed for applications requiring low voltage switching. This component features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous Drain Current (Id) of 750 mA at 25°C. The device offers a low Rds(on) of 500 mOhm maximum at 500 mA and 4.5 V Vgs, with a gate charge (Qg) of 0.85 nC maximum at 4.5 V. The input capacitance (Ciss) is 120 pF maximum at 16 V. Operating across a temperature range of -55°C to 150°C, the SI3134KLA-TP is housed in a compact DFN1006-3A surface mount package, enabling high-density designs. Its 250 mW maximum power dissipation is suitable for battery-powered devices and portable electronics. This MOSFET is commonly utilized in consumer electronics, automotive systems, and industrial control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-XDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 750mA |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 500mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 250mW |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | DFN1006-3A |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.85 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 16 V |
Request a Quote
Clients Also Buy
MCB70N10YB-TP
MOSFET N-CH D2-PAK
MCU02N80-TP
MOSFET N-CH
SI3134KL3A-TP
N-CHANNEL MOSFET DFN1006-3
