SI2324-TP
MOSFET N-CH ENH FET 100VDS 2A 8AManufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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Micro Commercial Co SI2324-TP is an N-Channel enhancement mode MOSFET designed for power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 2A at 25°C. The Rds(On) is specified at a maximum of 234mOhm at 1.5A and 10V gate drive. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 2.8V at 250µA. Key parameters include a maximum power dissipation of 1.2W and a gate charge (Qg) of 5.8 nC at 4.5V. Input capacitance (Ciss) is a maximum of 190 pF at 50V. The SI2324-TP is housed in a SOT-23 (TO-236-3, SC-59) surface mount package and operates within a temperature range of -55°C to 150°C. This component is suitable for use in various industrial and consumer electronics applications requiring efficient switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A |
| Rds On (Max) @ Id, Vgs | 234mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | SOT-23 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 190 pF @ 50 V |
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