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SI2102-TP

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SI2102-TP

MOSFET N-CH 20V 2.1A SOT323

Manufacturer: Micro Commercial Co

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Micro Commercial Co SI2102-TP is an N-Channel MOSFET designed for demanding applications. This component features a Drain to Source Voltage (Vdss) of 20 V and a continuous drain current (Id) capability of 2.1A at 25°C (Tj). The SI2102-TP offers a low on-resistance (Rds On) of a maximum 60mOhm at 3.6A and 4.5V, with a drive voltage range of 2.5V to 4.5V. Key parameters include a Gate Charge (Qg) of 10 nC maximum at 4.5V and an Input Capacitance (Ciss) of 300 pF maximum at 10V. The device is packaged in an SOT-323 (SC-70) surface mount configuration, suitable for high-density board layouts. With a maximum power dissipation of 200mW and an operating temperature range of -55°C to 150°C (TJ), the SI2102-TP is utilized in various electronic systems, including power management and signal switching.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2.1A (Tj)
Rds On (Max) @ Id, Vgs60mOhm @ 3.6A, 4.5V
FET Feature-
Power Dissipation (Max)200mW
Vgs(th) (Max) @ Id1.2V @ 50µA
Supplier Device PackageSOT-323
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds300 pF @ 10 V

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