MSJU11N65-TP
MOSFET N-CH 650V 11A DPAKManufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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Micro Commercial Co MSJU11N65-TP is a 650V N-Channel Power MOSFET with a continuous drain current of 11A (Tc) and a maximum power dissipation of 78W (Tc). This device features a low on-resistance of 380mOhm at 5.5A and 10V, and a gate charge of 21 nC at 10V. The input capacitance (Ciss) is 901 pF at 50V. The MSJU11N65-TP is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package and is supplied on tape and reel. It operates over a temperature range of -55°C to 150°C (TJ). This component is suitable for applications in power supply, lighting, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 78W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 901 pF @ 50 V |
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