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MSJU04N80A-TP

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MSJU04N80A-TP

N-CHANNEL MOSFET,DPAK

Manufacturer: Micro Commercial Co

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Micro Commercial Co MSJU04N80A-TP is an N-Channel MOSFET designed for high-voltage applications. This component features a maximum drain-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 4.5 A at 25°C. The on-resistance (Rds On) is specified at a maximum of 1.3 Ohms at 2.5 A and 10 V gate-source voltage. With a power dissipation of 88 W (Tj), it is suitable for demanding power management tasks. The device offers a gate charge (Qg) of 11.5 nC at 10 V and an input capacitance (Ciss) of 396 pF at 100 V. Packaged in a TO-252 (DPAK) surface-mount configuration, this MOSFET is a key component in power supplies, industrial automation, and lighting control systems. It operates within an ambient temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4.5A
Rds On (Max) @ Id, Vgs1.3Ohm @ 2.5A, 10V
FET Feature-
Power Dissipation (Max)88W (Tj)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)800 V
Gate Charge (Qg) (Max) @ Vgs11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds396 pF @ 100 V

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