MSJPF20N65A-BP
N-CHANNEL MOSFET,TO-220FManufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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The Micro Commercial Co MSJPF20N65A-BP is an N-Channel Power MOSFET designed for demanding applications. This TO-220F packaged device offers a robust 650V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C. With a maximum power dissipation of 34W and a low on-resistance (Rds On) of 180mOhm at 10A and 10V, it ensures efficient power handling. The gate charge (Qg) is specified at 56 nC max at 10V, with input capacitance (Ciss) rated at 1807 pF max at 25V. This component is suitable for through-hole mounting and operates across a wide temperature range of -55°C to 150°C. Its technological foundation is Metal Oxide MOSFET, supporting a ±30V gate-source voltage (Vgs) and a threshold voltage (Vgs(th)) of 4V max at 250µA. Applications include power factor correction, switch-mode power supplies, and general power switching across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 34W |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1807 pF @ 25 V |
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