MSJPF20N65-BP
MOSFET N-CH 650V 11A TO220FManufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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The Micro Commercial Co MSJPF20N65-BP is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 650V and a continuous drain current (Id) of 20A at 25°C, with a maximum power dissipation of 31.3W. The Rds On is specified at 380mOhm maximum with an Id of 5.5A and Vgs of 10V. Key parameters include a Gate Charge (Qg) of 21nC at 10V and Input Capacitance (Ciss) of 901pF at 50V. It operates within a temperature range of -55°C to 150°C and is housed in a TO-220F package for through-hole mounting. This MOSFET technology is suitable for power supply units, lighting, and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 31.3W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 901 pF @ 50 V |
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