MSJPF06N80A-BP
MOSFETManufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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Micro Commercial Co MSJPF06N80A-BP is an N-Channel Power MOSFET designed for high-voltage applications. This through-hole component features a drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 6A at 25°C. The Rds On is specified at a maximum of 1.2 Ohms at 2.5A and 10V gate drive. Key parameters include a maximum power dissipation of 22W (Tc), a gate charge (Qg) of 11 nC at 10V, and input capacitance (Ciss) of 349 pF at 100V. The device operates across a temperature range of -55°C to 150°C and is housed in a TO-220F package. This MOSFET finds application in power supply units, lighting, and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 22W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 349 pF @ 100 V |
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