MSJP20N65A-BP
N-CHANNEL MOSFET,TO-220AB(H)Manufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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Micro Commercial Co MSJP20N65A-BP is a 650V N-Channel Power MOSFET designed for high-voltage applications. This device features a continuous drain current capability of 20A at 25°C (Tc) and a maximum power dissipation of 151W. The low on-resistance of 190mOhm is achieved at 10A, 10V, with a gate drive voltage of 10V. Key parameters include a gate charge (Qg) of 53 nC and input capacitance (Ciss) of 1860 pF at specified voltage conditions. The MSJP20N65A-BP is housed in a standard TO-220AB (H) through-hole package, suitable for power supply designs, industrial controls, and lighting applications. It operates across a wide temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 151W |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB (H) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1860 pF @ 25 V |
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