MSJP20N65-BP
MOSFET N-CH TO220ABManufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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Micro Commercial Co MSJP20N65-BP is a high-voltage, N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 20A at 25°C (Tc), with a maximum power dissipation of 151W (Tc). The MSJP20N65-BP offers a low on-resistance (Rds On) of 170mOhm at 10A, 10V, and a gate charge (Qg) of 39 nC at 10V. Its input capacitance (Ciss) is 1724 pF at 100V. Packaged in a TO-220AB (H) through-hole configuration, this MOSFET operates across a wide temperature range of -55°C to 150°C (TJ). Typical applications include power supplies, motor control, and lighting systems in industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 151W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220AB (H) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1724 pF @ 100 V |
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