MSJP11N65-BP
MOSFET N-CH 650V 11A TO220ABManufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Micro Commercial Co MSJP11N65-BP is an N-Channel Power MOSFET designed for high voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 650V and a continuous drain current (Id) of 11A at 25°C. The on-resistance (Rds On) is specified at 380mOhm maximum at 5.5A and 10V gate drive. With a maximum power dissipation of 78W (Tc), it is housed in a standard TO-220AB package suitable for through-hole mounting. Key electrical characteristics include a gate charge (Qg) of 21 nC maximum at 10V and input capacitance (Ciss) of 901 pF maximum at 50V. This MOSFET is engineered for use in power supply circuits, motor control, and general-purpose switching applications within industrial and consumer electronics sectors. The operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 78W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB (H) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 901 pF @ 50 V |
Request a Quote
Clients Also Buy
MCQ4459-TP
MOSFET P-CH 30V 6.5A 8SOP
MCPF18N20-BP
MOSFET N-CHANNEL MOSFET
MCQ15N10Y-TP
MOSFET N-CH SOP-8
