MSJP09N65A-BP
N-CHANNEL MOSFET, TO-220AB(H)Manufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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Micro Commercial Co N-Channel MOSFET, part number MSJP09N65A-BP, offers a 650 V breakdown voltage and 9A continuous drain current at 25°C. This TO-220AB (H) package component features a maximum power dissipation of 113W (Tj) and a low on-resistance of 960mOhm at 1.5A and 10V. Key parameters include a gate charge of 10.6 nC @ 10 V and input capacitance of 383 pF @ 30 V. With a maximum gate-source voltage of ±30V and a threshold voltage of 4V @ 250µA, this MOSFET is suitable for applications in power supply designs, motor control, and lighting solutions. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 960mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 113W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB (H) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 383 pF @ 30 V |
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