MSJP08N90A-BP
N-CHANNEL MOSFET,TO-220AB(H)Manufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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The Micro Commercial Co MSJP08N90A-BP is an N-Channel Power MOSFET designed for demanding applications requiring high voltage and efficient switching. This component features a Drain-Source Voltage (Vdss) of 900V and a continuous drain current (Id) of 8A at 25°C, with a maximum power dissipation of 113W (Tc). The Rds On is specified at a maximum of 1.62Ohm at 2.5A and 10V gate drive. Key parameters include a maximum gate charge (Qg) of 13.6 nC at 10V and input capacitance (Ciss) of 474 pF at 25V. The device utilizes Through Hole mounting in a TO-220AB (H) package, operating across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply units, motor control, and industrial power applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.62Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 113W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB (H) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 474 pF @ 25 V |
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