MSJP06N80A-BP
InterfaceManufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Micro Commercial Co MSJP06N80A-BP is an N-Channel MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 800V and a continuous Drain Current (Id) of 6A at 25°C. With a maximum Power Dissipation of 35W (Tc) and an Rds On of 1.2 Ohm at 2.5A and 10V gate drive, it is suitable for demanding power switching requirements. The device utilizes MOSFET technology and is housed in a TO-220AB through-hole package, facilitating ease of assembly. Key parameters include a gate charge of 10.6 nC (Max) at 10V and input capacitance (Ciss) of 349 pF (Max) at 100V. The operating temperature range is -55°C to 150°C. This component finds application in power supply units, lighting, and industrial motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 349 pF @ 100 V |
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