MCU50N03-TP
MOSFET N-CH ENH FET 30VDS 50A 20Manufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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Micro Commercial Co MCU50N03-TP is an N-Channel enhancement mode MOSFET designed for power switching applications. This device features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 50A at 25°C (Tc). The Rds On is specified at a maximum of 6.5mOhm at 25A and 10V Vgs. With a gate charge (Qg) of 23 nC maximum at 10V and input capacitance (Ciss) of 2000 pF maximum at 15V, it offers efficient switching characteristics. The device is rated for 60W maximum power dissipation and operates across a temperature range of -55°C to 150°C (TJ). The MCU50N03-TP is housed in a TO-252-3, DPAK surface mount package, making it suitable for automated assembly in various industries including automotive, industrial, and consumer electronics. It supports a maximum gate-to-source voltage (Vgs) of ±20V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 15 V |
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