MCU40N10AHE3-TP
MOSFET N-CHANNEL MOSFETManufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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Micro Commercial Co MCU40N10AHE3-TP is a high-performance N-Channel power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 40 A at 25°C. The device boasts a low on-resistance (Rds On) of 16.9 mOhm maximum at 20 A and 10 V, ensuring efficient power transfer. With a maximum gate charge (Qg) of 25 nC at 10 V and input capacitance (Ciss) of 1218 pF maximum at 50 V, it offers excellent switching characteristics. The surface mount TO-252 (DPAK) package facilitates compact board designs. Power dissipation ratings are 1.25 W at ambient temperature (Ta) and 50 W at case temperature (Tc). Operating temperature range is -55°C to 150°C. This MOSFET is suitable for use in power supply units, automotive electronics, and industrial motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A |
| Rds On (Max) @ Id, Vgs | 16.9mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1218 pF @ 50 V |
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