MCU40N10-TP
MOSFET N-CH 100VDS 20VGS 40A 160Manufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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Micro Commercial Co MCU40N10-TP is an N-Channel MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 40A at 25°C. The Rds(on) is specified at a maximum of 17mOhm at 28A and 10V gate drive voltage. With a gate charge (Qg) of 94 nC maximum at 10V and input capacitance (Ciss) of 3400 pF maximum at 30V, it offers efficient switching characteristics. The component is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, suitable for high-density board designs. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is utilized across various industrial sectors including automotive, power management, and industrial automation. The maximum gate-source voltage (Vgs) is ±20V, and the gate threshold voltage (Vgs(th)) is 2.5V maximum at 250µA. The power dissipation capability is 1.25W.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 30 V |
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