MCU20N06-TP
MOSFET N-CH 60VDS 20VGS 20A 4.1NManufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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Micro Commercial Co N-Channel Power MOSFET, MCU20N06-TP, offers robust performance with a 60V drain-source breakdown voltage and continuous drain current capability of 20A at 25°C. This surface-mount component, housed in a TO-252-3 DPAK package, features a low on-resistance of 45mOhm maximum at 20A and 10V Vgs. The specified gate-source voltage range is ±20V, with a threshold voltage of 3V at 250µA. Input capacitance (Ciss) is a maximum of 500pF at 30V, and gate charge (Qg) is 12nC maximum at 10V. Optimized for applications requiring efficient power switching, this MOSFET is commonly utilized in automotive, industrial, and consumer electronics sectors. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 30 V |
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