MCU18P10-TP
MOSFET P-CH DPAKManufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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Micro Commercial Co MCU18P10-TP is a P-Channel MOSFET designed for power management applications. This component features a Drain to Source Voltage (Vdss) of 100 V and a continuous drain current (Id) of 18A at 25°C. The Rds On is specified at a maximum of 100mOhm at 16A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 61 nC (max) at 10 V and input capacitance (Ciss) of 2100 pF (max) at 25 V. The device operates within a temperature range of -55°C to 150°C and is housed in a TO-252-3, DPAK (SC-63) surface mount package, supplied on tape and reel. This MOSFET is suitable for use in industrial and automotive sectors requiring efficient power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 25 V |
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