MCU18N10-TP
MOSFET N-CHManufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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Micro Commercial Co MCU18N10-TP is an N-Channel Power MOSFET designed for demanding applications. This component offers a 100V drain-to-source voltage (Vdss) and supports a continuous drain current (Id) of 18A at 25°C, with a maximum power dissipation of 47W. The device features a low on-resistance (Rds On) of 46mOhm at 4.5A and 10V Vgs, and a gate charge (Qg) of 26.8 nC at 10V. Designed for surface mounting, it utilizes the TO-252-3, DPAK (2 Leads + Tab), SC-63 package. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for use in power management, automotive, and industrial control systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 47W |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 26.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380 pF @ 50 V |
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