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MCU10N10-TP

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MCU10N10-TP

MOSFET N-CH 100V 9.6A DPAK

Manufacturer: Micro Commercial Co

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Micro Commercial Co MCU10N10-TP is an N-Channel MOSFET designed for surface mount applications. This component features a Drain to Source Voltage (Vdss) of 100 V and a continuous drain current (Id) of 9.6A at 25°C junction temperature. The Rds On is specified at a maximum of 140mOhm at 5A and 10V gate-source voltage. Key electrical characteristics include a Gate Charge (Qg) of 15.5 nC maximum at 10V and an Input Capacitance (Ciss) of 690 pF maximum at 25V. The device operates over a temperature range of -55°C to 150°C (TJ). It is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package and is supplied on a Tape & Reel (TR). This MOSFET is suitable for various industrial applications requiring efficient switching and power handling.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9.6A (Tj)
Rds On (Max) @ Id, Vgs140mOhm @ 5A, 10V
FET Feature-
Power Dissipation (Max)-
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds690 pF @ 25 V

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