MCU04N60A-TP
MOSFET N-CHANNEL MOSFETManufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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Micro Commercial Co. N-Channel Power MOSFET, part number MCU04N60A-TP, is designed for high-efficiency power switching applications. This device features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 4 A at 25°C, with a maximum power dissipation of 44.6 W. The on-resistance (Rds On) is specified at a maximum of 2.6 Ohms at 2 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 10 nC at 10 V and input capacitance (Ciss) of 760 pF at 25 V. The MCU04N60A-TP utilizes surface mount technology, housed in a TO-252-3, DPAK package, making it suitable for compact board designs. Operating temperature range is from -55°C to 150°C. This component is commonly found in power supplies, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Rds On (Max) @ Id, Vgs | 2.6Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 44.6W |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 25 V |
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