MCU01N60-TP
MCU01N60-TPManufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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Micro Commercial Co N-Channel Power MOSFET, MCU01N60-TP. This TO-252 (DPAK) surface mount device offers a 600V drain-source voltage rating and 1A continuous drain current at 25°C. Key parameters include a maximum on-resistance of 10 Ohms at 450mA drain current and 10V gate-source voltage, with a typical gate charge of 5nC at 10V. It features 135pF input capacitance at 25V and a maximum continuous power dissipation of 17W at the case temperature. The operating temperature range is -55°C to 150°C. This MOSFET is utilized in industrial power supplies and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A |
| Rds On (Max) @ Id, Vgs | 10Ohm @ 450mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 17W (Tc) |
| Vgs(th) (Max) @ Id | 4.2V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 135 pF @ 25 V |
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