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MCQ20N03HE3-TP

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MCQ20N03HE3-TP

Interface

Manufacturer: Micro Commercial Co

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Micro Commercial Co MCQ20N03HE3-TP is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 20A at 25°C. The Rds(On) is specified at a maximum of 6.3mOhm at 18A and 10V Vgs. Key parameters include an input capacitance (Ciss) of 2191pF at 15V Vds and a gate charge (Qg) of 46.3nC at 10V Vgs. The device supports a gate-source voltage range of ±20V and has a threshold voltage (Vgs(th)) of 2.5V at 250µA. With a maximum power dissipation of 3W, it is housed in an 8-SOP surface mount package. This MOSFET is AEC-Q101 qualified and rated for automotive applications, making it suitable for power management and motor control systems within the automotive sector.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Ta)
Rds On (Max) @ Id, Vgs6.3mOhm @ 18A, 10V
FET Feature-
Power Dissipation (Max)3W
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-SOP
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs46.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2191 pF @ 15 V
QualificationAEC-Q101

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