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MCQ03P10Y-TP

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MCQ03P10Y-TP

MOSFET N-CHANNEL MOSFET

Manufacturer: Micro Commercial Co

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Micro Commercial Co MCQ03P10Y-TP is a P-Channel MOSFET designed for surface mount applications. This component offers a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 3.1 A at 25°C (Ta). The device features a maximum power dissipation of 3.1 W (Tj) and a typical Rds On of 170 mOhm at 3 A and 10 V. Drive voltages range from 4.5 V to 10 V. Key electrical characteristics include a maximum gate charge (Qg) of 20 nC at 10 V and a maximum input capacitance (Ciss) of 1051 pF at 50 V. The MOSFET operates within a temperature range of -55°C to 150°C (Tj). Packaged in an 8-SOP (8-SOIC) format, this component is suitable for use in power management and control circuits across various industries. The maximum gate-source voltage (Vgs) is ±20V, and the threshold voltage (Vgs(th)) is a maximum of 2.5V at 250µA.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3.1A (Ta)
Rds On (Max) @ Id, Vgs170mOhm @ 3A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Tj)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-SOP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1051 pF @ 50 V

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