MCPF18N20-BP
MOSFET N-CHANNEL MOSFETManufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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Micro Commercial Co's MCPF18N20-BP is a N-Channel MOSFET designed for applications requiring high voltage and current handling. This component features a Drain-to-Source Voltage (Vdss) of 200 V and a continuous drain current (Id) of 18A at 25°C (Tc). The Rds On is specified at a maximum of 160mOhm at 9A and 10V gate drive. With a power dissipation of 35W and a junction temperature range of -55°C to 150°C, it is suitable for demanding thermal environments. The TO-220F package with through-hole mounting facilitates integration into various PCB designs. Key parameters include Gate Charge (Qg) of 17.7 nC and Input Capacitance (Ciss) of 836 pF. This MOSFET is utilized in power supply, motor control, and lighting control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 836 pF @ 25 V |
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