MCPF12N65-BP
MOSFET N-CHManufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Micro Commercial Co MCPF12N65-BP is an N-Channel MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 650V and a continuous Drain Current (Id) of 12A at 25°C. The device exhibits a maximum On-Resistance (Rds On) of 850mOhm at 6A and 10V gate drive. Key parameters include a typical Gate Charge (Qg) of 5nC at 10V and an Input Capacitance (Ciss) of 1800pF at 25V. The MCPF12N65-BP is housed in a TO-220F package, suitable for through-hole mounting. Its maximum power dissipation is rated at 2W, and it operates across a wide temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
Request a Quote
Clients Also Buy
SI0301-TP
N-CHANNEL MOSFET,SOT-23
MCQ4459-TP
MOSFET P-CH 30V 6.5A 8SOP
MCPF18N20-BP
MOSFET N-CHANNEL MOSFET
