MCP55H12-BP
MOSFET N-CHManufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Micro Commercial Co. MOSFET N-Channel, part number MCP55H12-BP. This through-hole component features a 55V drain-to-source voltage (Vdss) and supports a continuous drain current (Id) of 120A at 25°C. The N-Channel MOSFET exhibits a maximum Rds(on) of 5.5mOhm at 40A and 10V Vgs. Key parameters include input capacitance (Ciss) of 4900pF at 25V and gate charge (Qg) of 125nC at 10V Vgs. The TO-220AB package is suitable for applications requiring robust power handling in industries such as automotive and industrial power control. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4900 pF @ 25 V |
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