MCP07N65-BP
MOSFET N-CH 650V 7A TO220ABManufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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Micro Commercial Co MCP07N65-BP is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 650 V and a continuous Drain Current (Id) of 7A at 25°C. The Rds On is specified at a maximum of 1.4 Ohms at 3.5A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 26 nC at 10V and Input Capacitance (Ciss) of 1600 pF at 25V. The device has a maximum Gate-Source Voltage (Vgs) of ±30V and a threshold voltage (Vgs(th)) of 4.5V at 250µA. Packaged in a TO-220AB through-hole configuration, it operates across a temperature range of -55°C to 150°C. This MOSFET is utilized in power supply units, lighting, and industrial control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tj) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
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