MCP04N80-BP
MOSFET N-CHManufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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Micro Commercial Co MCP04N80-BP is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 800V and a continuous Drain current (Id) of 4A at 25°C, with a maximum power dissipation of 63W. The Rds On is specified at 1.2 Ohms maximum at 2A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 13 nC maximum at 10V and Input Capacitance (Ciss) of 598 pF maximum at 50V. The device utilizes Through Hole mounting in a TO-220AB package. Operating temperature ranges from -55°C to 150°C. This MOSFET is suitable for applications in power supply units, lighting, and motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 598 pF @ 50 V |
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