MCMN2012-TP
MOSFET N-CH 20V 12A DFN2020-6JManufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Micro Commercial Co MCMN2012-TP is an N-Channel MOSFET designed for efficient power switching applications. This component features a 20V drain-source breakdown voltage and supports a continuous drain current of 12A at 25°C. With a low on-resistance of 11mOhm at 9.7A and 4.5V Vgs, it minimizes conduction losses. The DFN2020-6J package provides a compact surface mount solution suitable for high-density designs. Key electrical characteristics include a maximum gate charge of 32 nC and an input capacitance of 1800 pF. The MCMN2012-TP is utilized in power management, consumer electronics, and automotive sectors where reliable and efficient switching is critical. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 9.7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | DFN2020-6J |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 4 V |
Request a Quote
Clients Also Buy
MCB70N10YB-TP
MOSFET N-CH D2-PAK
MCU02N80-TP
MOSFET N-CH
SI3134KL3A-TP
N-CHANNEL MOSFET DFN1006-3
