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MCMG66-TP

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MCMG66-TP

MOSFET P-CH 16V 5.8A DFN2020-6G

Manufacturer: Micro Commercial Co

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Micro Commercial Co MCMG66-TP is a P-Channel MOSFET designed for high-efficiency power switching applications. With a Drain-Source Voltage (Vdss) of 16V and a continuous Drain Current (Id) of 5.8A at 25°C, this component offers robust performance. It features a low Rds On of 45mOhm at 4.1A and 4.5V, facilitating minimal conduction losses. The device is housed in a compact DFN2020-6G package, suitable for surface mounting in space-constrained designs. Key parameters include a Gate Charge (Qg) of 7.8 nC at 4.5V and an Input Capacitance (Ciss) of 740 pF at 4V. This MOSFET is rated for a maximum power dissipation of 1.7W (Ta) and operates across a temperature range of -55°C to 150°C (TJ). Its specifications make it suitable for use in various industries, including consumer electronics and industrial control systems. The drive voltage requirements are 2.5V for minimum Rds On and 4.5V for maximum Rds On, with a maximum Gate-Source Voltage (Vgs) of ±8V.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-WDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C5.8A (Ta)
Rds On (Max) @ Id, Vgs45mOhm @ 4.1A, 4.5V
FET Feature-
Power Dissipation (Max)1.7W (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageDFN2020-6G
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)16 V
Gate Charge (Qg) (Max) @ Vgs7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds740 pF @ 4 V

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