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MCG50P03-TP

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MCG50P03-TP

P-CHANNEL MOSFET,DFN3333

Manufacturer: Micro Commercial Co

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Micro Commercial Co MCG50P03-TP is a P-Channel MOSFET designed for efficient power switching applications. This component features a Drain to Source Voltage (Vdss) of 30V and a continuous drain current (Id) capability of 50A at 25°C. It offers a low on-resistance of 6.2mOhm maximum at 15A and 10V gate drive, with a maximum power dissipation of 83W. The device is housed in an 8-VDFN Exposed Pad package, specifically a DFN3333, and is supplied in Tape & Reel packaging. Key electrical characteristics include an input capacitance (Ciss) of 6464pF maximum at 15V and a gate charge (Qg) of 111.7nC maximum at 10V. Operating temperature range is specified from -55°C to 150°C. This MOSFET is commonly utilized in automotive systems, industrial power supplies, and battery management solutions.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-VDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C50A
Rds On (Max) @ Id, Vgs6.2mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)83W
Vgs(th) (Max) @ Id2.8V @ 250µA
Supplier Device PackageDFN3333
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs111.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6464 pF @ 15 V

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